Baffled Box Sources

R. D. Mathis Company’s baffled box source has proven reliable for depositing silicon monoxide (SiO). This design operates by placing source material in separated cavities inside the box.

SM Source Diagram

1. When heated, vaporized material follows indirect pathing through a series of baffles.
2. This path filters out any particulates, which then exhausts out of the chimney.
3. The substrate does not have line-of-sight with the bulk material at any time during film formation, inhibiting spitting and streaming which causes pinhole-type defects.

Directional Deposition and Customization

Standard sources come available with up, down or horizontal exhaust ports for directional deposition. Both exhaust placement and box capacity can be custom fabricated to meet specific deposition needs upon request.

SiO and ZnS Applications

For literature describing thermal evaporation techniques and results of depositing silicon monoxide, consult the paper Silicon Monoxide Evaporation with the Multi-Baffled Box Source by Earl Olson of the Halex Corp. and R. D. Mathis, available from our technical library here.