R. D. Mathis Company’s baffled box source has proven to be an extremely successful method of depositing silicon monoxide (SiO). Source material is positioned in the box within separate cavities; when heated, it follows an indirect path through a series of baffles and then out of the exhaust chimney. The substrate cannot see the bulk material at any time, essentially eliminating any chance of spitting and streaming which causes pinhole type defects.
Many of the sources shown are available with up, down or horizontal exhaust ports for directional deposition. Custom fabrication and larger volume sources to fit your specific process needs are available upon request.
For literature describing thermal evaporation techniques and results of depositing silicon monoxide, consult the paper Silicon Monoxide Evaporation with the Multi-Baffled Box Source by Earl Olson of the Halex Corp. and R. D. Mathis, available on request.
SM Source Diagram